Granted Patent
Utility
US 5,614,751 · App. 08/632,052
Edge termination structure for power MOSFET
Inventors:
Hamza Yilmaz, Fwu-Iuan Hshieh
Patented Case
View Patent ↗
Granted: Mar 25, 1997
Filed: Apr 15, 1996
Inventors
Hamza Yilmaz
Fwu-Iuan Hshieh
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.