IP Library › Granted Patent US 5,637,519
Granted Patent Utility
US 5,637,519 · App. 08/620,020

Method of fabricating a lightly doped drain thin-film transistor

Inventors: Hsiung-Kuang Tsai, Sheng-Kai Hwang
Patented Case View Patent ↗
Granted: Jun 10, 1997 Filed: Mar 21, 1996
Inventors
Hsiung-Kuang Tsai
Sheng-Kai Hwang
Assignee (at issue)
Industrial Technology Research Institute

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Quick Facts
Patent No.
US 5,637,519
App. No.
08/620,020
Filed
1996-03-21
Granted
1997-06-10
Kind
A