IP Library › Granted Patent US 5,639,677
Granted Patent Utility
US 5,639,677 · App. 08/665,868

Method of making a gaAs power semiconductor device operating at a low voltage

Inventors: Jong Lam Lee, Hae Cheon Kim, Jae Kyoung Mun, Hyung-Moo Park
Patented Case View Patent ↗
Granted: Jun 17, 1997 Filed: Jun 19, 1996
Inventors
Jong Lam Lee
Hae Cheon Kim
Jae Kyoung Mun
Hyung-Moo Park
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Quick Facts
Patent No.
US 5,639,677
App. No.
08/665,868
Filed
1996-06-19
Granted
1997-06-17
Kind
A