Granted Patent
Utility
US 5,643,821 · App. 08/336,768
Method for making ohmic contact to lightly doped islands from a silicide buried layer and applications
Inventor:
James D. Beasom
Patented Case
View Patent ↗
Granted: Jul 1, 1997
Filed: Nov 9, 1994
Inventor
James D. Beasom
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.