Granted Patent
Utility
US 5,644,166 · App. 08/503,385
Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts
Inventors:
Jeffrey W. Honeycutt, Sujit Sharan
Patented Case
View Patent ↗
Granted: Jul 1, 1997
Filed: Jul 17, 1995
Inventors
Jeffrey W. Honeycutt
Sujit Sharan
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.