Granted Patent
Utility
US 5,645,683 · App. 08/385,124
Etching method for etching a semiconductor substrate having a silicide layer and a polysilicon layer
Inventor:
Hidenobu Miyamoto
Patented Case
View Patent ↗
Granted: Jul 8, 1997
Filed: Feb 7, 1995
Inventor
Hidenobu Miyamoto
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.