Granted Patent
Utility
US 5,646,449 · App. 08/504,062
Semiconductor device having a multi-layered conductive structure which includes an aluminum alloy layer, a high melting temperature metal layer, and a high melting temperature nitride layer
Inventors:
Makiko Nakamura, Yasuhiro Fukuda, Yasuyuki Tatara, Yusuke Harada, Hiroshi Onoda
Patented Case
View Patent ↗
Granted: Jul 8, 1997
Filed: Jul 18, 1995
Inventors
Makiko Nakamura
Yasuhiro Fukuda
Yasuyuki Tatara
Yusuke Harada
Hiroshi Onoda
Assignee (at issue)
OKI ELECTRIC INDUSTRY CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.