Granted Patent
Utility
US 5,648,280 · App. 08/533,850
Method for fabricating a bipolar transistor with a base layer having an extremely low resistance
Inventor:
Hirosi Kato
Patented Case
View Patent ↗
Granted: Jul 15, 1997
Filed: Sep 26, 1995
Inventor
Hirosi Kato
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.