Granted Patent
Utility
US 5,648,281 · App. 08/647,073
Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate
Inventors:
Richard K. Williams, Hamza Yilmaz, Michael E. Cornell, Jun-Wei Chen
Patented Case
View Patent ↗
Granted: Jul 15, 1997
Filed: May 8, 1996
Inventors
Richard K. Williams
Hamza Yilmaz
Michael E. Cornell
Jun-Wei Chen
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.