Granted Patent
Utility
US 5,650,650 · App. 08/454,324
High speed semiconductor device with a metallic substrate
Inventors:
Tadahiro Ohmi, Hisayuki Shimada, Masaki Hirayama
Patented Case
View Patent ↗
Granted: Jul 22, 1997
Filed: Aug 10, 1995
Inventors
Tadahiro Ohmi
Hisayuki Shimada
Masaki Hirayama
Assignee (at issue)
Tadahiro Ohmi
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.