Granted Patent
Utility
US 5,652,444 · App. 08/532,917
Structure and method for making FETs and HEMTs insensitive to hydrogen gas
Inventors:
Minh Le, Jeff B. Shealy, Loi D. Nguyen
Patented Case
View Patent ↗
Granted: Jul 29, 1997
Filed: Sep 22, 1995
Inventors
Minh Le
Jeff B. Shealy
Loi D. Nguyen
Assignee (at issue)
HUGHES ELECTRONICS LIMITED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.