Granted Patent
Utility
US 5,653,798 · App. 08/485,982
Method of making substrates for the growth of 3C-silicon carbide
Inventors:
James D. Parsons, Ajay Kumar Chaddha, Her Song Chen, Jin Wu
Patented Case
View Patent ↗
Granted: Aug 5, 1997
Filed: Jun 7, 1995
Inventors
James D. Parsons
Ajay Kumar Chaddha
Her Song Chen
Jin Wu
Assignee (at issue)
Oregon Graduate Institute of Science & Technology
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.