Granted Patent
Utility
US 5,656,513 · App. 08/474,879
Nonvolatile memory cell formed using self aligned source implant
Inventors:
Hsingya Arthur Wang, James Hsu
Patented Case
View Patent ↗
Granted: Aug 12, 1997
Filed: Jun 7, 1995
Inventors
Hsingya Arthur Wang
James Hsu
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.