IP Library Granted Patent US 5,658,381
Granted Patent Utility
US 5,658,381 · App. 08/439,022

Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal

Inventors: Randhir P. S. Thakur, Michael Nuttall
Patented Case View Patent ↗
Granted: Aug 19, 1997 Filed: May 11, 1995
Inventors
Randhir P. S. Thakur
Michael Nuttall
Assignee (at issue)
Micron Technology, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,658,381
App. No.
08/439,022
Filed
1995-05-11
Granted
1997-08-19
Kind
A