Granted Patent
Utility
US 5,663,087 · App. 08/310,279
Method for forming silicon nitride film having low leakage current and high break down voltage
Inventor:
Ayumi Yokozawa
Patented Case
View Patent ↗
Granted: Sep 2, 1997
Filed: Sep 21, 1994
Inventor
Ayumi Yokozawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.