Granted Patent
Utility
US 5,666,307 · App. 08/557,514
PMOS flash memory cell capable of multi-level threshold voltage storage
Inventor:
Shang-De Ted Chang
Patented Case
View Patent ↗
Granted: Sep 9, 1997
Filed: Nov 14, 1995
Inventor
Shang-De Ted Chang
Assignee (at issue)
Programmable Microelectronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.