IP Library › Granted Patent US 5,672,521
Granted Patent Utility
US 5,672,521 · App. 08/561,306

Method of forming multiple gate oxide thicknesses on a wafer substrate

Inventors: Radu Barsan, Xiao-Yu Li, Sunil Mehta
Patented Case View Patent ↗
Granted: Sep 30, 1997 Filed: Nov 21, 1995
Inventors
Radu Barsan
Xiao-Yu Li
Sunil Mehta
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 5,672,521
App. No.
08/561,306
Filed
1995-11-21
Granted
1997-09-30
Kind
A