Granted Patent
Utility
US 5,674,766 · App. 08/429,414
Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
Inventors:
Mohamed N. Darwish, Richard K. Williams
Patented Case
View Patent ↗
Granted: Oct 7, 1997
Filed: Apr 26, 1995
Inventors
Mohamed N. Darwish
Richard K. Williams
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.