Granted Patent
Utility
US 5,677,207 · App. 08/610,933
Method for fabricating a thin film transistor using silicide layer
Inventor:
Yong Min Ha
Patented Case
View Patent ↗
Granted: Oct 14, 1997
Filed: Mar 5, 1996
Inventor
Yong Min Ha
Assignee (at issue)
LG ELECTRONICS INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.