IP Library Granted Patent US 5,686,749
Granted Patent Utility
US 5,686,749 · App. 08/534,648

Non-volatile semiconductor memory device with thin film transistor formed on a separation insulating film adjacent to a memory cell, and method of making thereof

Inventor: Makoto Matsuo
Patented Case View Patent ↗
Granted: Nov 11, 1997 Filed: Sep 27, 1995
Inventor
Makoto Matsuo
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,686,749
App. No.
08/534,648
Filed
1995-09-27
Granted
1997-11-11
Kind
A