Granted Patent
Utility
US 5,686,749 · App. 08/534,648
Non-volatile semiconductor memory device with thin film transistor formed on a separation insulating film adjacent to a memory cell, and method of making thereof
Inventor:
Makoto Matsuo
Patented Case
View Patent ↗
Granted: Nov 11, 1997
Filed: Sep 27, 1995
Inventor
Makoto Matsuo
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.