Granted Patent
Utility
US 5,689,128 · App. 08/533,814
High density trenched DMOS transistor
Inventors:
Fwu-Iuan Hshieh, Mike F. Chang, Kuo-In Chen, Richard K. Williams, Mohamed N. Darwish
Patented Case
View Patent ↗
Granted: Nov 18, 1997
Filed: Aug 21, 1995
Inventors
Fwu-Iuan Hshieh
Mike F. Chang
Kuo-In Chen
Richard K. Williams
Mohamed N. Darwish
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.