IP Library › Granted Patent US 5,693,546
Granted Patent Utility
US 5,693,546 · App. 08/659,315

Methods of forming thin film transistors having lightly-doped drain and source regions therein

Inventors: Byeong-yun Nam, Sang Won Lee, Jin Hong Kim
Patented Case View Patent ↗
Granted: Dec 2, 1997 Filed: Jun 6, 1996
Inventors
Byeong-yun Nam
Sang Won Lee
Jin Hong Kim
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

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Quick Facts
Patent No.
US 5,693,546
App. No.
08/659,315
Filed
1996-06-06
Granted
1997-12-02
Kind
A