Granted Patent
Utility
US 5,693,569 · App. 08/768,807
Method of forming silicon carbide trench mosfet with a schottky electrode
Inventor:
Katsunori Ueno
Patented Case
View Patent ↗
Granted: Dec 2, 1997
Filed: Dec 18, 1996
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.