Granted Patent
Utility
US 5,696,017 · App. 08/363,883
Method of fabricating a semiconductor device with a capacitor structure having increased capacitance
Inventor:
Kazuyoshi Ueno
Patented Case
View Patent ↗
Granted: Dec 9, 1997
Filed: Dec 27, 1994
Inventor
Kazuyoshi Ueno
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.