Granted Patent
Utility
US 5,710,072 · App. 08/737,236
Method of producing and arrangement containing self-amplifying dynamic MOS transistor memory cells
Inventors:
Wolfgang Krautschneider, Lothar Risch, Franz Hofmann
Patented Case
View Patent ↗
Granted: Jan 20, 1998
Filed: Nov 18, 1996
Inventors
Wolfgang Krautschneider
Lothar Risch
Franz Hofmann
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.