Granted Patent
Utility
US 5,729,029 · App. 08/709,355
Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
Inventor:
Serge L. Rudaz
Patented Case
View Patent ↗
Granted: Mar 17, 1998
Filed: Sep 6, 1996
Inventor
Serge L. Rudaz
Assignee (at issue)
Hewlett-Packard Company, L.P.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.