Granted Patent
Utility
US 5,729,155 · App. 08/531,480
High voltage CMOS circuit which protects the gate oxides from excessive voltages
Inventor:
Hiroyuki Kobatake
Patented Case
View Patent ↗
Granted: Mar 17, 1998
Filed: Sep 21, 1995
Inventor
Hiroyuki Kobatake
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.