Granted Patent
Utility
US 5,733,792 · App. 08/688,266
MOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the same
Inventor:
Sadaaki Masuoka
Patented Case
View Patent ↗
Granted: Mar 31, 1998
Filed: Jul 29, 1996
Inventor
Sadaaki Masuoka
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.