Granted Patent
Utility
US 5,742,628 · App. 08/650,439
Short wavelength laser emitting diode with an improved GaN system double heterostructure
Inventor:
Hiroaki Fujii
Patented Case
View Patent ↗
Granted: Apr 21, 1998
Filed: May 20, 1996
Inventor
Hiroaki Fujii
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.