Granted Patent
Utility
US 5,744,835 · App. 08/747,928
MOS semiconductor device with mask layers
Inventor:
Hiroyuki Inoue
Patented Case
View Patent ↗
Granted: Apr 28, 1998
Filed: Nov 12, 1996
Inventor
Hiroyuki Inoue
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.