Granted Patent
Utility
US 5,750,416 · App. 08/479,308
Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance
Inventors:
Fwu-Iuan Hshieh, Mike F. Chang, Jan Van Der Linde, Yueh-Se Ho
Patented Case
View Patent ↗
Granted: May 12, 1998
Filed: Jun 7, 1995
Inventors
Fwu-Iuan Hshieh
Mike F. Chang
Jan Van Der Linde
Yueh-Se Ho
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.