Granted Patent
Utility
US 5,767,539 · App. 08/826,026
Heterojunction field effect transistor having a InAlAs Schottky barrier layer formed upon an n-InP donor layer
Inventor:
Kazuhiko Onda
Patented Case
View Patent ↗
Granted: Jun 16, 1998
Filed: Mar 28, 1997
Inventor
Kazuhiko Onda
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.