Granted Patent
Utility
US 5,770,495 · App. 08/548,913
Method of fabricating semiconductor device including high temperature heat treatment
Inventors:
Nolifumi Sato, Shinji Ohara, Hitoshi Mitani, Hidetaka Natsume, Takami Hiruma
Patented Case
View Patent ↗
Granted: Jun 23, 1998
Filed: Oct 26, 1995
Inventors
Nolifumi Sato
Shinji Ohara
Hitoshi Mitani
Hidetaka Natsume
Takami Hiruma
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.