Granted Patent
Utility
US 5,770,503 · App. 08/895,004
Method of forming low threshold voltage vertical power transistor using epitaxial technology
Inventors:
Fwu-Iuan Hshieh, Hamza Yilmaz, Mike F. Chang
Patented Case
View Patent ↗
Granted: Jun 23, 1998
Filed: Jul 17, 1997
Inventors
Fwu-Iuan Hshieh
Hamza Yilmaz
Mike F. Chang
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.