Granted Patent
Utility
US 5,773,357 · App. 08/591,795
Method for producing silicon film to bury contact hole
Inventor:
Seiichi Shishiguchi
Patented Case
View Patent ↗
Granted: Jun 30, 1998
Filed: Jan 25, 1996
Inventor
Seiichi Shishiguchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.