IP Library › Granted Patent US 5,773,358
Granted Patent Utility
US 5,773,358 · App. 08/695,407

Method of forming a field effect transistor and method of forming CMOS integrated circuitry

Inventors: Jeff Zhiqiang Wu, Sittampalam Yoganathan
Patented Case View Patent ↗
Granted: Jun 30, 1998 Filed: Aug 12, 1996
Inventors
Jeff Zhiqiang Wu
Sittampalam Yoganathan
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 5,773,358
App. No.
08/695,407
Filed
1996-08-12
Granted
1998-06-30
Kind
A