Granted Patent
Utility
US 5,776,804 · App. 08/736,933
Process of fabricating semiconductor device having non-single crystal thin film transistor free from residual hydrogen left therein during hydrogen treatment stage
Inventor:
Fumihiko Hayashi
Patented Case
View Patent ↗
Granted: Jul 7, 1998
Filed: Oct 25, 1996
Inventor
Fumihiko Hayashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.