IP Library Granted Patent US 5,776,822
Granted Patent Utility
US 5,776,822 · App. 08/785,279

Method for fabricating semiconductor device having titanium silicide film

Inventors: Kunihiro Fujii, Hiroshi Ito
Patented Case View Patent ↗
Granted: Jul 7, 1998 Filed: Jan 23, 1997
Inventors
Kunihiro Fujii
Hiroshi Ito
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,776,822
App. No.
08/785,279
Filed
1997-01-23
Granted
1998-07-07
Kind
A