Granted Patent
Utility
US 5,780,903 · App. 08/789,553
Method of fabricating a lightly doped drain thin-film transistor
Inventors:
Hsiung-Kuang Tsai, Sheng-Kai Hwang
Patented Case
View Patent ↗
Granted: Jul 14, 1998
Filed: Jan 27, 1997
Inventors
Hsiung-Kuang Tsai
Sheng-Kai Hwang
Assignee (at issue)
Industrial Technology Research Institute
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.