Granted Patent
Utility
US 5,780,909 · App. 08/905,334
Semiconductor memory device with a two-layer top gate
Inventor:
Fumihiko Hayashi
Patented Case
View Patent ↗
Granted: Jul 14, 1998
Filed: Aug 4, 1997
Inventor
Fumihiko Hayashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.