IP Library › Granted Patent US 5,783,839
Granted Patent Utility
US 5,783,839 · App. 08/821,926

Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration

Inventors: Takenori Morikawa, Tsutomu Tashiro
Patented Case View Patent ↗
Granted: Jul 21, 1998 Filed: Mar 21, 1997
Inventors
Takenori Morikawa
Tsutomu Tashiro
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,783,839
App. No.
08/821,926
Filed
1997-03-21
Granted
1998-07-21
Kind
A