IP Library › Granted Patent US 5,793,058
Granted Patent Utility
US 5,793,058 · App. 08/692,924

Multi-gate offset source and drain field effect transistors and methods of operating same

Inventors: Min-Koo Han, Byung-Hyuk Min, Cheol Min Park, Keun-Ho Jang, Jae Hong Jun
Patented Case View Patent ↗
Granted: Aug 11, 1998 Filed: Jul 31, 1996
Inventors
Min-Koo Han
Byung-Hyuk Min
Cheol Min Park
Keun-Ho Jang
Jae Hong Jun
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,793,058
App. No.
08/692,924
Filed
1996-07-31
Granted
1998-08-11
Kind
A