IP Library Granted Patent US 5,801,396
Granted Patent Utility
US 5,801,396 · App. 08/488,398

Inverted field-effect device with polycrystalline silicon/germanium channel

Inventors: Tsiu C. Chan, Yu-Pin Han, Elmer H. Guritz, Richard A. Blanchard
Patented Case View Patent ↗
Granted: Sep 1, 1998 Filed: Jun 7, 1995
Inventors
Tsiu C. Chan
Yu-Pin Han
Elmer H. Guritz
Richard A. Blanchard
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 5,801,396
App. No.
08/488,398
Filed
1995-06-07
Granted
1998-09-01
Kind
A