IP Library › Granted Patent US 5,801,417
Granted Patent Utility
US 5,801,417 · App. 08/106,406

Self-aligned power MOSFET device with recessed gate and source

Inventors: Dah W. Tsang, John W. Mosier, II, Douglas A. Pike, Jr., Theodore O. Meyer
Patented Case View Patent ↗
Granted: Sep 1, 1998 Filed: Aug 13, 1993
Inventors
Dah W. Tsang
John W. Mosier, II
Douglas A. Pike, Jr.
Theodore O. Meyer
Assignee (at issue)
Advanced Power Technology Corporation

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Quick Facts
Patent No.
US 5,801,417
App. No.
08/106,406
Filed
1993-08-13
Granted
1998-09-01
Kind
A