Granted Patent
Utility
US 5,801,426 · App. 08/515,941
Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
Inventor:
Ryuichi Okamura
Patented Case
View Patent ↗
Granted: Sep 1, 1998
Filed: Aug 16, 1995
Inventor
Ryuichi Okamura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.