IP Library Granted Patent US 5,801,579
Granted Patent Utility
US 5,801,579 · App. 08/808,237

High voltage NMOS pass gate for integrated circuit with high voltage generator

Inventors: Binh Quang Le, Pau-Ling Chen, Shane Hollmer, Shoichi Kawamura, Michael Chung, Vincent Leung, Masaru Yano
Patented Case View Patent ↗
Granted: Sep 1, 1998 Filed: Feb 28, 1997
Inventors
Binh Quang Le
Pau-Ling Chen
Shane Hollmer
Shoichi Kawamura
Michael Chung
Vincent Leung
Masaru Yano
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 5,801,579
App. No.
08/808,237
Filed
1997-02-28
Granted
1998-09-01
Kind
A