IP Library Granted Patent US 5,804,473
Granted Patent Utility
US 5,804,473 · App. 08/717,811

Thin film semiconductor device having a polycrystal active region and a fabrication process thereof

Inventor: Yutaka Takizawa
Patented Case View Patent ↗
Granted: Sep 8, 1998 Filed: Sep 24, 1996
Inventor
Yutaka Takizawa
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 5,804,473
App. No.
08/717,811
Filed
1996-09-24
Granted
1998-09-08
Kind
A