IP Library Granted Patent US 5,805,513
Granted Patent Utility
US 5,805,513 · App. 08/432,867

Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor

Inventors: Yasushi Takahashi, Hidetoshi Iwai, Satoshi Oguchi, Hisashi Nakamura, Hiroyuki Uchiyama, Toshitugu Takekuma, Shigetoshi Sakomura, Kazuyuki Miyazawa, Masamichi Ishihara, Ryoichi Hori, Takeshi Kizaki, Yoshihisa Koyama, Haruo Ii, Masaya Muranaka, Hidetomo Aoyagi, Hiromi Matsuura
Patented Case View Patent ↗
Granted: Sep 8, 1998 Filed: May 2, 1995
Inventors
Yasushi Takahashi
Hidetoshi Iwai
Satoshi Oguchi
Hisashi Nakamura
Hiroyuki Uchiyama
Toshitugu Takekuma
Shigetoshi Sakomura
Kazuyuki Miyazawa
Masamichi Ishihara
Ryoichi Hori
Takeshi Kizaki
Yoshihisa Koyama
Haruo Ii
Masaya Muranaka
Hidetomo Aoyagi
Hiromi Matsuura
Assignees (at issue)
HITACHI, LTD.
Hitachi VLSI Engineering Corp.

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Quick Facts
Patent No.
US 5,805,513
App. No.
08/432,867
Filed
1995-05-02
Granted
1998-09-08
Kind
A