Granted Patent
Utility
US 5,812,463 · App. 08/918,355
System and method for a high speed, high voltage latch for memory devices
Inventor:
Eungjoon Park
Patented Case
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Granted: Sep 22, 1998
Filed: Aug 26, 1997
Inventor
Eungjoon Park
Assignee (at issue)
INTEGRATED SILICON SOLUTION INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.