Granted Patent
Utility
US 5,814,239 · App. 08/684,608
Gas-phase etching and regrowth method for Group III-nitride crystals
Inventors:
Yawara Kaneko, Norihide Yamada
Patented Case
View Patent ↗
Granted: Sep 29, 1998
Filed: Jul 19, 1996
Inventors
Yawara Kaneko
Norihide Yamada
Assignee (at issue)
Hewlett-Packard Company, L.P.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.